发明名称 |
Rare earth doped semiconductor laser |
摘要 |
A solid state laser is disclosed wherein a semiconductor active layer is arranged in a Fabry-Perot cavity and the active layer is doped with a rare earth ion having a dominant emission wavelength. The proportion of elements for the compound active layer is chosen such that the bandgap corresponds to a wavelength which is longer than the emission wavelength of the rare earth ion. In the specific embodiment disclosed, the quarternary semiconductor compound is gallium indium arsenide phosphide and the rare earth ion is erbium.
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申请公布号 |
US4737960(A) |
申请公布日期 |
1988.04.12 |
申请号 |
US19860911976 |
申请日期 |
1986.09.26 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY, AT&T BELL LABORATORIES |
发明人 |
TSANG, WON-TIEN |
分类号 |
H01S5/00;H01S3/16;H01S5/22;H01S5/30;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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