| 摘要 |
PURPOSE:To provide materials and manufacturing process that are applicable in performing an optical communication, materials of which are cheaper than those of a green emission element where a GaAsP inclined layer is prepared on a GaAs substrate and, designs of which can be performed as an element in an arbitrary manner by causing an InGaP mixed crystal of 0.5-0.75 in terms of mol fraction of GaP to grow stepwise on a GaP substrate. CONSTITUTION:A gallium phosphide (GaP) substrate is arranged at the upper side and an InGaP alloy having a composition of 0.50-0.75 in terms of mol fraction of GaP is arranged at the lower side and its intermediate part between the above two sides is filled with an In-Ga solution that deposits indium/gallium phosphide (InGaP) of around 0.85-1.0 in terms of GaP mol fraction when such a crystal growth starts. Then, a solute that is dissolved from a raw material alloy side by fluctuating simultaneously temperatures of the GaP substrate, raw material alloy, and the solution at a some temperature difference is transported to a GaP substrate crystal side. Subsequently, the solute permits an InGaP epitaxial layer where InP mol fraction is stepwise added to grow and after cycling a temperature several times the solute also permits an InGaP single crystal where a mixed crystal composition in 0.5-0.75 in terms of GaP mol fraction to grow. And furthermore, pn junction is formed on the InGaP single crystal by a diffusion or a liquid growth technology. A material for emission element having such a structure makes it possible not only to take out light in an arbitrary direction but also to perform designs regarding the emission element for an optical communication from more unrestricted standpoints. |
