| 摘要 |
PURPOSE:To permit high-speed recording by using an alloy formed by adding an element having a low m.p. to an InSb alloy and specifying the content thereof to form a recording layer of a medium which makes recording by a phase change between the crystalline and amorphous phases of the recording layer. CONSTITUTION:Information is recorded on the recording layer 3 by projecting a light beam to said layer so as to induce a phase change between the crystalline and amorphous phases thereof. The layer 3 is formed of the alloy constituted by incorporating the element M selected from Zn, Cd, Tl, Pb, Po, Li and Hg to the In-Sb alloy contg. 40-80atom% Sb within a <=30atom% range of the total amt. of the In-Sb alloy and M. The element M has the m.p. lower than the m.p. of the In-Sb alloy and the m.p. of the In-Sb alloy is decreased by adding said element to the alloy. The sensitivity of the recording and erasure in the recording layer is thereby improved and the high-speed recording and erasure are permitted; in addition, the use of a low-output light source is permitted. |
