| 摘要 |
PURPOSE:To form an Si- or C-base amorphous thin film having high hardness on a substrate in an evacuated reactor by heating the substrate, feeding a gaseous hydrocarbon or a gaseous Si-contg. hydrocarbon and applying electromagnetic energy such as microwaves. CONSTITUTION:A substrate is put in a reactor, this reactor is evacuated to about 10<-3>Torr and the substrate is heated to 200-350 deg.C with a heating furnace. A gaseous H2-He mixture is then introduced into the reactor to regulate the internal pressure to about 10<-2>Torr and electromagnetic energy is applied by an induction system or a capacity coupling system to cause plasma discharge. A gaseous hydrocarbon such as acetylene or methane or a gaseous Si-contg. hydrocarbon such as tetramethylsilane is fed to the plasma atmosphere. A C- or Si-base amorphous or semiamorphous thin film having >=4,500kg/cm<2> hardness and wear resistance is formed on the surface of the substrate. |
