| 摘要 |
PURPOSE:To shorten exposure time, by dividing photoresist into a thick layer and a thin layer, exposing the upper layer of the thick layer beforehand, and performing rear surface exposure for the thin film. CONSTITUTION:A photoresist layer is formed in a double-layer structure of a first photoresist layer 5-1 and a second photoresist layer 5-2. Ultraviolet rays 12-1 are projected on the entire surface of the thick photoresist layer 5-1 from the upper part of a substrate 1 and the layer 5-1 is exposed. The layer 5-1 is made to be in a transparent state for the ultraviolet rays 12-1. Thereafter, the thin photoresist layer 5-2 is formed on the layer 5-1. Ultraviolet rays 12-2 are projected on the layer 5-2 from the rear side surface of the transparent substrate 1, and the layer 5-2 is exposed. As a result, only the layer 5-2, which is formed on the layer 5-1, is subject to the rear surface exposure because the layer 5-1 is made to be in the transparent state by the front surface exposure. Therefore, the exposing time for the rear surface is shortened to a large extent in comparison with a conventional method. |
