| 摘要 |
PURPOSE:To make development treatment smoothly to progress by removing an intermixing layer by uniformly plasma-ashing a resist surface in predetermined thickness before development treatment. CONSTITUTION:Plasma ashing is conducted equally in prescribed thickness from the surface of a wafer 15 by a plasma ashing device 10 to the wafer 15 from which a CEM (a contrast-enhancement-material) or an upper layer resist immidiately before development treatment is removed. Consequently, even when an intermixing layer is formed between a lower layer resist 2 and the CEM (or the upper layer resist) 3, the wafer 15 from which the CEM 3 or the upper layer resist is gotten rid of only by the thickness section of the intermixing layer or a thickness section slightly larger than the thickness section is plasma-ashed uniformly. As a result, the intermixing layer section is shaven off, and the wafer is forwarded to a development treatment process. Accordingly, subsequent development treatment can be executed smoothly, and a strange resist pattern is not formed, thus resuling in accurate patterning. |
