发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 A method of exposing only the top surface of a narrow mesa is disclosed wherein a protective layer may be very precisely formed on a very narrow mesa for subsequent doping of areas adjacent the mesa without doping the mesa itself. A variation of the invention includes forming an opening directly over the narrow mesa so that a contact may be made at only the top surface of the mesa or the upper portion of the mesa may be doped independent of surfaces adjacent the mesa.
申请公布号 JPS6378535(A) 申请公布日期 1988.04.08
申请号 JP19860221764 申请日期 1986.09.18
申请人 RCA CORP 发明人 SHIEN TEN SUU
分类号 H01L21/302;H01L21/033;H01L21/3065;H01L21/308;H01L29/06 主分类号 H01L21/302
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