| 摘要 |
PURPOSE:To form a photoconductive material capable of obtaining an image high in density, sharp in halftone, high in resolution, and high in quality by forming a photoconductive layer contg. an amorphous material composed essentially of Si atom consisting of 3 regions on a substrate. CONSTITUTION:The first photoconductive layer 102 composed essentially of a-Si, preferably a-Si(H, X) is formed on the substrate 101 of a photoconductive material, and the second layer 106 composed essentially of Si and C atoms is formed on the layer 102. The layer 102 is successively divided into a region A (103), a region B (104), and a region C (105) in the layer thickness direction from the side of the substrate 101 in accordance with the difference of its constituent elements. The region A contains an element of group III of the periodic table, the region B contains no element of group III, and the region C contains the element of group III and N. As a result, extremely superior potential acceptance can be attained by the effects of raising resistance of the layer 102, and widening the gap of an energy band due to high concn. of N in the vicinity of the joined interface between the layers 102 and 106. |
