| 摘要 |
PURPOSE:To form an electrophotographic photoconductive material capable of obtaining an image high in density, sharp in halftone, high in resolution, and superior in quality by forming a photoconductive layer contg. an amorphous material composed essentially of Si atom consisting of 2 specified layers on a substrate. CONSTITUTION:The first photoconductive layer 102 composed essentially of a-Si, preferably a-Si(H, X) is formed on the substrate 101 of a photoconductive material, and further, the second layer 105 composed essentially of Si and C is formed on the layer 102. The layer 102 is divided into a lower layer region 103 and an upper layer region 104 in the layer thickness direction from the side of the substrate 101 in accordance with the difference of its constituent elements. The lower region 103 is doped with an element of group III of the periodic table in an almost uniform concn. distribution, and the upper region 104 is doped with N atom and an element of group III in a nonuniform concn. distribution in the layer thickness direction with respect with the element of group III. |
