发明名称 |
HALBLEITER-DEHNUNGSMESSER UND VERFAHREN ZU SEINER HERSTELLUNG |
摘要 |
A strain gage wherein neutral impurity atoms forming neither donors nor acceptors are doped in a silicon substrate and a diffused resistance element is formed in the doped region, thereby decreasing the temperature coefficient of resistivity without changing the resistivity and decreasing the temperature coefficient of piezoresistance coefficient with no effect on the piezoresistance coefficient which governs the sensitivity of the strain gage. |
申请公布号 |
DE3731832(A1) |
申请公布日期 |
1988.04.07 |
申请号 |
DE19873731832 |
申请日期 |
1987.09.22 |
申请人 |
YOKOGAWA ELECTRIC CORP. |
发明人 |
YAMAGISHI,HIDEAKI;NOMIYAMA,MAYUMI |
分类号 |
H01L29/84;G01B7/16;G01L1/22;(IPC1-7):H01L21/22 |
主分类号 |
H01L29/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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