| 摘要 |
PURPOSE:To obtain a double injection structure of hole and electron thereby to increase a current driving capacity, to perform a high speed response, thereby to be able to apply to various fields by disposing an n-type layer and a p-type layer through an i-type layer between source and drain electrodes. CONSTITUTION:An n-type layer 26, an i-type layer 25 and a p-type layer 24 made of any one semiconductor layer of an amorphous silicon film a fine crystal silicon layer, a polycrystalline silicon film and a recrystallized silicon film are provided as active layers. The layers 26, 24 are disposed in the film thickness direction through the layer 25 between a source electrode 22 and a drain electrode 23, and a gate electrode 28 is provided on the layer 24. The electrode 28 is provided through a gate insulating film 27 on the layer 25. Accordingly, the n-type layer and the p-type layer are disposed through the i-type layer to obtain a double injection structure of hole and electron. |
