发明名称 |
METHOD OF FORMING A RESIST MASK RESISTANT TO PLASMA ETCHING |
摘要 |
A mask which is resistant to a plasma etching treatment is formed by lithographically patterning a radiation sensitive film present on a substrate. The etch resistance of the mask is enhanced by exposure to a carbon monoxide plasma which forms a region with an enhanced etch resistance over the surface of the patterned film. This method may be used, for example, to manufacture a photomask using a chromium coated glass substrate, or during the manufacture of semiconductor devices on a semiconductor wafer substrate. |
申请公布号 |
DE3375839(D1) |
申请公布日期 |
1988.04.07 |
申请号 |
DE19833375839 |
申请日期 |
1983.05.17 |
申请人 |
PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES LIMITED;N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
MEYER, JOSEPH;VINTON, DAVID JOHN |
分类号 |
C23F4/00;G03F7/26;G03F7/40;H01L21/027;(IPC1-7):G03F7/26 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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