| 摘要 |
PURPOSE:To reduce the loss of injection carrier in a semiconductor light emitting device by suppressing nonlight emitting recombination of minority carrier impregnated to a compound semiconductor layer having a large gap from a compound semiconductor side having a small energy band gap for forming a hetero junction. CONSTITUTION:Nonlight emitting recombination suppressing layers 6, 7 have predetermined thickness and predetermined impurity concentration as essential data. A compound semiconductor for forming the layers 6, 7 selects GaAs which has a value substantially equal to an energy band gap in InAlAs for forming clad layers 3, 5 and has less center of deep level. When the thickness of the layers 6, 7 is, for example, approx. 30Angstrom , no dislocation due to irregular lattice matching occurs in the state a strain is applied thereto. Thus, since the nonlight emitting recombination of minority carrier impregnated to the semiconductor layer having small energy band gap from the semiconductor layer having large energy band gap for forming a hetero junction is suppressed, the loss of injection carrier is reduced. |
