| 摘要 |
<p>A radiation-emitting semiconductor device (10) (i.e. a LED or laser) emits radiation produced by radiative recombination of electrons from a field induced two-dimensional (2-d) electron gas (48) with holes from a field induced two-dimensional (2-d) hole gas (46). The device (10) uses a narrower band semiconductor active layer (20) sandwiched between two layers (16 and 18) of a wider band semiconductor. Top and bottom gates (22 and 14) are used to induce the electron and hole 2-d gasses (48, 46) in the active layer (20). N+ and P+ (24, 26, 28, and 30) regions are used to contact the 2-d electron and hole gasses (48, 46) to provide separate biasing. The thickness of the active layer (20) is such that a field induced PN junction or PIN structure is formed at which radiative recombination can occur.</p> |
