| 摘要 |
In a high-frequency power transistor with bipolar epitaxial technology, the emitter (2), the base (3) and the collector (4) contacts are located on a main plane of a silicon chip. On the second, opposite main plane, a metallization (22) can be applied to provide a trouble-free connection with a cooling body. Within the substrate, shield electrodes (13, 15) can be provided to compensate to a large extent the undesirable effect of depletion layer diodes. |
