CHEMICAL VAPOR DEPOSITION APPARATUS

摘要

The reactant gas is caused to flow in a direction parallel to the substrate surface in a controlled temp. reaction zone having a temp. of 250-1300 deg.C and a pressure of max. 750 Torr, the temp. differences throughout the reaction zone being less than 2 deg.C from preselected temps. The appts. includes a radiant heating system surrounding an inner deposition reaction chamber for providing precisely controlled temp. conditions within the chamber. The chamber has a gas distribution system for gas introduction and removal, and is surrounded by a vacuum chamber for maintaining a medium vacuum with in the reaction chamber.