发明名称 SEMICONDUCTOR DEVICE SUBSTRATE
摘要 <p>PURPOSE:To prevent the generation of waterdrops on the surface of the substrate and to obviate spotting by covering the hydrophobic part of the substrate surface with a hydrophilic material. CONSTITUTION:A metallic film of chromium, iron oxide, nickel, etc., is formed on a glass substrate 1 by vacuum deposition or sputtering. These metallic materials are generally hydrophobic. A photoresist film is applied on the metallic film, the pattern of a master mask is transferred by photolithography, and a desired pattern 2 is obtained by etching. A hydrophilic film 3 is then formed on the metallic pattern 2. An SiO2 film is used as the hydrophilic film and formed by low-temp. CVD, etc. Since a hydrophilic film is formed on the metallic pattern in this way, waterdrops are not formed on the substrate surface even when the photomask on the substrate is cleaned with pure water.</p>
申请公布号 JPH0683040(A) 申请公布日期 1994.03.25
申请号 JP19920238492 申请日期 1992.09.07
申请人 SHARP CORP 发明人 FUKUNAGA NAOKI
分类号 G03F1/60;H01L21/027;H01L21/304 主分类号 G03F1/60
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