| 摘要 |
PURPOSE:To prevent the production of FeF3 and the erosion of the structural material as well as to remove the causes of etching defects or pin holes of a vapor-deposition layer by coating a surface of the structural material made of stainless in the device for gas-phase method with a metallic film which hardly form fluoride in a plasma atmosphere. CONSTITUTION:A surface of the structural part made of stainless in the device for gas-phase method, by which fabrication of etching patterns in a plasma atmosphere of fluoride gas, formation of a deposition film and cleaning treatment are carried out, is coated with a metallic film which hardly form fluoride in a plasma atmosphere. As such metallic film that hardly form fluoride in a plasma atmosphere, nickel, chrome, gold, aluminum, copper, silver and tin are used and particularly, nickel and chrome are more preferable. Aslo, such metallic film can be coated on the stainless constructive part by gilding, vapordeposition and so on. |
