DUENNSCHICHT-ELEKTROLUMINESZENZVORRICHTUNG

摘要

A thin film electroluminescent device comprising a luminescent layer 4 of alkaline earth metal chalcogen, at least one dielectric layer 3 disposed on the surface of the luminescent layer 4, and electrode 2, is characterized in that at least one of the dielectric layers 3 is made of nitride. The nitride dielectric layer 3 can prevent the interaction of the alkaline earth metal in the luminescent layer 4 with oxide in the insulating layer to provide the thin film EL device of high brightness and high reliability. <IMAGE>