发明名称 |
METHOD FOR FORMING FLATTENED FILM |
摘要 |
A flat film can be formed on a functional structure having uneven surface formed on a semiconductor substrate firstly by applying a film-forming organic material capable of being cured by energy beams and exhibiting fluidity by heat on the uneven surface of the functional structure. Then, the organic material is fluidized by applying heat to the applied organic material, thereby substantially flattening the surface of the organic material. Energy beams are irradiated to the flattened organic material to cure the flattened organic material, thereby converting the flattened organic material into a cured film which is not deformed by heat and energy beams. |
申请公布号 |
DE3469643(D1) |
申请公布日期 |
1988.04.07 |
申请号 |
DE19843469643 |
申请日期 |
1984.04.25 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HIGASHIKAWA, IWAO C/O PATENT DIVISION;ARIKADO, TSUNETOSHI C/O PATENT DIVISION |
分类号 |
H01L21/3105;H01L21/312;H01L21/768;(IPC1-7):H01L21/312;H01L21/56 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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