| 发明名称 |
METHOD OF PRODUCING A SEMICONDUCTOR DEVICE FOR THE INTEGRATED INJECTION LOGIC, AND SEMICONDUCTOR DEVICE SO MANUFACTURED |
| 摘要 |
An integrated injection logic (I2L) semiconductor structure is disclosed which may be advantageously implemented in a group III-V compound semiconductor such as gallium arsenide. The base region of the lateral transistor is made extremely thin (less than one-tenth micron) by use of "regrowth" techniques. The structure of the vertical transistor is simplified by using a Schottky collector. |
| 申请公布号 |
EP0198383(A3) |
申请公布日期 |
1988.04.06 |
| 申请号 |
EP19860104724 |
申请日期 |
1986.04.07 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT BERLIN UND MUNCHEN |
发明人 |
SHIEH, CHANG-LONG, DR. |
| 分类号 |
H01L27/082;H01L21/20;H01L21/331;H01L21/8226;H01L21/8252;H01L27/06;H01L29/73;(IPC1-7):H01L21/82;H01L27/08 |
主分类号 |
H01L27/082 |
| 代理机构 |
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