| 摘要 |
<p>PURPOSE:To make a size of a cell become identical with an area of an opening due to usability of incident light from a rear side and to enlarge efficiency in photoelectric conversion and to increase output, by piling a fine heterogeneous material, which is larger in density of nucleus formation than the material of a light transmitting substrate, on the piling surface of the substrate and forming a photoelectric conversion cell on a single-crystal region which is formed in this heterogeneous material. CONSTITUTION:A recessed part is formed in a light transmitting substrate 1, and a heterogeneous material with large density of nucleus formation is piled thinly in the recessed part, and a patterning process is performed by lithography or the like so that a heterogeneous material 2 is formed into very fine one. Next, a single nucleus of a thin film material is formed in only the heterogeneous material 2. The nucleus is made to grow while being kept in a single-crystal structure and to become an insular single-crystal grain 3 and moreover to grow enough to fill the recessed part so that a collector region 4 is formed. A base region 5 is formed in a part of this region 4 by an ion implantation method or the like. Next, a gate oxidizing film 6 is formed on the surface of the single crystal. A polysilicon electrode 8 is formed on a part of the base region 5 by a LPCVD method. Next, a layer-insulation layer 10 is piled by a CVD method or the like. Moreover, electrodes 17 and 12 are formed on an emitter region 7 and a collector contact region 9, respectivery.</p> |
