| 摘要 |
PURPOSE:To make a threshold current lower and perform continuous operation at room temperature by preparing a nearly circular active layer including a quantum well as well as impurity-introduced region surrounding the above active layer and leading out light from a plane that is parallel to the active layer. CONSTITUTION:A clad layer 2a and a multi quantum well 3a grow on an n- GaAs substrate 1 and an SiO2 film 4 is formed with a CVD process or an etching process. And then, a Zn diffusion is carried out and p-Al GaAs 3b is formed after disordering the multi quantum well. Moreover, after forming a p-type electrode 5 and an n-electrode 6, an aperture 7 for taking out a light is formed with a photoetching process. The quantum well is so used as a light emitting layer that its light emitting efficiency is high and, since there is an optical waveguide structure composed of the quantum well as well as a region where the quantum well is disordered by introducing impurities, a loss due to the optical waveguide is small and accordingly, oscillations can be performed at a low threshold. |
