| 摘要 |
PURPOSE:To prevent a gate insulating film from being damaged because of failure of wiring and maintain a desired breakdown strength of the gate by preparing a channel stopper separating a span between regions of source and drain at a lower region of both ends of a gate electrode and also arranging selectively a thick insulating film at the lower region of a connection part of the interconnection in the gate electrode. CONSTITUTION:A gate electrode 5 is formed to have a length that is long enough for it to be put in an upper region of p<->type island-like recrystallized Si substrate 3 through a gate SiO2 film 4. And p-type channel stoppers 6a and 6b are selectively formed at a lower region of both ends of the gate electrode 5 so that an outer end parts of the stoppers can reach edge parts of the Si substrate 3. And then, a thick SiO2 insulating film 7 for buffer is selectively arranged between the gate electrode 4 located at the lower region of one end part of the gate electrode 5 where the gate electrode 5 and a gate wiring 13 are connected and the p-type channel stopper 6a that is formed at p<->type recrystallized Si substrate 3. Thus, the desired breakdown strength of the gate in proportion to a thickness of the gate insulating film is maintained and at the same time, an electric leakage due to the channel formation is hindered. Accordingly, the above arrangement helps avoid dielectric breakdown developed between the gate and substrate because of failure of wiring. |
