发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To make a junction structure between a pellet and a substrate leaving no void in a junction layer between the pellet and the substrate by a method wherein a throughhole is made in the substrate to be filled with a brazing material. CONSTITUTION:Within a semiconductor device comprising a pellet 1, a substrate 3 and a brazing material layer 2 junctioning the former two elements with each other, the substrate 3 is provided with a throughhole 4 to be filled with the brazing material. It is recommended that the throughole 4 is made on a position opposing to the central part of pellet 1 further to be divided into a large part 4a and small part 4b. Through these procedures, any residual gas in the brazing material layer for junction can bleed from the throughhole made in the substrate during the brazing process while a part of melted brazing material is led into the cavity 4a to collect any defective brazing material into this part assumed as a final coagulating part so that the defective brazing material may be collected into this cavity to form the brazing material layer 2 for junction without any defect such as void etc. at all.
申请公布号 JPS6376461(A) 申请公布日期 1988.04.06
申请号 JP19860219519 申请日期 1986.09.19
申请人 HITACHI LTD 发明人 YASUKAWA AKIO;SAKURADA SHUROKU
分类号 H01L21/52;H01L23/12 主分类号 H01L21/52
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