发明名称 |
Interconnect and contact system for metal-gate MOS VLSI devices |
摘要 |
A simplified process for metal gate and contact/interconnect system for MOS VLSI devices employs a refractory metal structure for the gate, including a thick layer of tungsten alone, with stress and adhesion controlled by the deposition conditions. The metal gate receives sidewall oxide spacers during a metal-cladding operation for the source/drain areas. Contacts to the source/drain region include a molybdenum/tungsten stack and a top layer of gold.
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申请公布号 |
US4736233(A) |
申请公布日期 |
1988.04.05 |
申请号 |
US19840624166 |
申请日期 |
1984.06.25 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MCDAVID, JAMES M. |
分类号 |
H01L21/8234;H01L23/532;H01L27/088;H01L29/417;H01L29/45;H01L29/49;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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