发明名称 PHOTOMASK
摘要 a main pattern of predetermined type fabricated on a quartz substrate; multiple subsidiary pattern where a slit is longer than the wavelength of a stepper source and is less than three times the wavelength on the assumption that the subsidiary pattern is fabricated as a predetermined type on where chrome is passivated among the region of the quartz substrate
申请公布号 KR960000179(B1) 申请公布日期 1996.01.03
申请号 KR19930010716 申请日期 1993.06.12
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 BAE, SANG - MAN
分类号 G03F1/36;G03F1/70;G03F7/20;H01L21/02;H01L21/027 主分类号 G03F1/36
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