| 摘要 |
PURPOSE:To provide high potential retentivity and to prevent residual potential from being produced by successively forming the 1st blocking layer of amorphous silicon having a specified specific resistance value or below and the 2nd blocking layer of amorphous silicon having a specified specific resistance value or above between a support and a photoconductive layer of amorphous silicon. CONSTITUTION:The 1st blocking layer 2 of amorphous silicon (a-Si) having <=10<9>OMEGAcm specific resistance and the 2nd blocking layer 3 of a-Si having >=10<9> OMEGAcm specific resistance are successively formed on an electrically conductive support 1. A photoconductive layer 4 of a-Si contg. a IIIA group atom such as B is formed on the layer 3. A surface coating layer 5 may be formed on the layer 4 to stabilize the surface of the layer 4. It is preferable that each of the layers 2, 3, 4 is an a-Si layer contg. at least one between H and halogen, and the specific resistance is regulated by adding a small amount of B, P or the like. The layer 5 is an Si layer contg. O, N or H. Thus, a photosensitive a-Si body producing no residual potential and having high sensitivity and a long life is obtd. |
