| 发明名称 |
In-situ doping of MBE grown II-VI compounds on a homo- or hetero-substrate |
| 摘要 |
The present invention relates to a method of manufacturing semiconductors by as vacuum deposition process on various kinds of group II-VI compound semiconductors by irradiating onto the substrate an ion beam containing nitrogen or phosphorus or arsenic to obtain a p-type thin film crystal.
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| 申请公布号 |
US4735910(A) |
申请公布日期 |
1988.04.05 |
| 申请号 |
US19860906460 |
申请日期 |
1986.09.12 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MITSUYU, TSUNEO;YAMAZAKI, OSAMU |
| 分类号 |
H01L21/363;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/363 |
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