| 摘要 |
In a process of fabricating a semiconductor IC device, a semiconductor substrate (1) having a first region (3) of a first conduction type which is electrically isolated is prepared, on which a polycrystalline semiconductor layer, and oxidation-resistant layers (81, 82) are formed in turn. In part of the first region that is not covered by the oxidation-resistant layers, second regions (62, 62) of a second conduction type are formed. Parts of the polycrystalline semiconductor layer that are not covered by the oxidation-resistant layers are selectively oxidized. After removal of the oxidation-resistant layers, an impurity of the second conduction type is introduced in the polycrystalline semiconductor layers, and is diffused therefrom into parts of the first regions beneath them to form therein a third region (10) and a fourth region (61) of the second conduction. Selected parts of the surfaces of the polycrystalline layers are exposed. An impurity of the first conduction type is introduced through the exposed surface in the polycrystalline semiconductor layer on the fourth region (61), and diffused therefrom into part of the fourth region to form therein a fifth region (11) of the first conduction type.
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