MAGNETO-OPTIC MEMORY ELEMENT

摘要

A magneto-optic memory element includes a GdTbFe recording layer sandwiched between a pair of transparent AlN dielectric layers. At least one of the pair of transparent AlN dielectric layers is extended to have a size larger than the GdTbFe recording layer, whereby to cover the peripheral edge of the GdTbFe recording layer, thereby protecting the GdTbFe recording layer from adverse effects of oxygen and moisture. An Al-Ni alloy reflection film is formed on one of the pair of transparent AIN dielectric layers in order to increase the apparent Kerr rotation angle produced by the magneto-optic memory element.