| 摘要 |
PURPOSE:To prevent the cracking at the time of polishing and to improve the yield of a product by incorporating H2 at a specific value into a sputtering gas at the time of forming a protective layer by sputtering on a magnetic head element formed of a thin film on a substrate. CONSTITUTION:The head element 10 is formed by laminating a lower magnetic layer 2, an insulating layer 3 as well as a coil conductor 4 and an upper magnetic layer 5 on the substrate 1. The protective layer 6 consisting of oxide is further formed on the element 10 by sputtering and is flattened by polishing. A protective plate 8 is joined by an adhesive agent 7 thereto to form the magnetic head. H2 is incorporated under >=1% partial pressure into the sputtering gas at the time of sputtering the layer 6, by which the mechanical strength of the layer 6 is increased and the cracking to be generated at the time of polishing flat is prevented. The partial pressure is maintained at <=50% in order to prevent a decrease in the film forming speed. The yield of the product at the time of production is thereby prevented. |
