| 摘要 |
PURPOSE:To prevent decrease of yield due to short circuiting between a first and a second wirings via abnormal apertures of an interlayer insulation film caused by pin holes and the like of a resist film generated in an etching process to make through holes, by forming a second wiring pattern on the interlayer insulating film before the through holes are formed in the interlayer insulating film which covers the first wiring pattern. CONSTITUTION:A first wiring pattern 2 of aluminum is formed on the surface of a semiconductor substrate 1, and a silicon nitride film 3 is stuck on the whole surface thereof. Then aluminum is stuck on the whole surface, and a second wiring pattern 4 is formed by photo-lithography. In this process, a resist film 6 as an etching mask is not eliminated and left as it is. By photo-lithography, an aperture 8 is formed in a resist film 7 so as to span regions A and B, where A is a region in which the wiring pattern 2 and the wiring pattern 4 overlap with each other sandwitching the film 3, and B is a region in which they do not overlap. Then a through hole 9 is formed in the film 3 applying the resist films 6 and 7 to masks to expose the surface of the first wiring pattern 2. |
