| 摘要 |
PURPOSE:To improve sensitivity to high energy radiation, more specifically electron rays and X-rays, definition and dry etching resistance by using a spe cific polymer contg. the repeating unit of the structure in which a naphthalene ring is substd. with a carbonyl compd. CONSTITUTION:The polymer contg. the repeating unit expressed by the formula I is used as a radiation sensitive material. In the formula I, a R denotes a hydrogen atom, alkyl group of 1-3C, X1-X3 denote a hydrogen atom or halogen atom. Such polymer is dissolved in a solvent to prepare a resist soln., which is then coated on a substrate by a spin coating method to form a uniform thin resist film. The film is exposed with the radiation such as electron rays of X-rays and is developed to form the resist image. The substrate is etched with said image as a mask to form the pattern. |
