发明名称 SEMICONDUCTOR LIGHT-EMITTING DEVICE
摘要 PURPOSE:To improve the linearity of electro-optical conversion by forming a nonreflective film on the terminal end face of an insulating section. CONSTITUTION:A nonreflective film having film thickness lambda/4 (lambda=luminous wavelength)=2500Angstrom and consisting of calcium fluoride is used as a nonreflective film 9. An insulating section 2 is shaped by polyimide. Accordingly, when the nonreflective film 9 is formed, return beams are reduced, thus acquiring luminous characteristics having the excellent linearity of current-beam conversion.
申请公布号 JPS6373573(A) 申请公布日期 1988.04.04
申请号 JP19860218528 申请日期 1986.09.16
申请人 FUJITSU LTD 发明人 OSAKA SHIGEO
分类号 H01L33/10;H01L33/14;H01L33/30;H01L33/46 主分类号 H01L33/10
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