| 摘要 |
<p>PURPOSE:To improve reliability by disposing a resistive field plate film so as to simultaneously cover a second main electrode and a control electrode. CONSTITUTION:An oxide film 24 is formed onto the surface of an n<-> type drain layer 12 shaped onto an n<+> type drain layer 11 through epitaxial growth, the oxide film 24 is etched to a predetermined pattern, and a gate electrode 16 is formed through a gate oxide film 15. p-type base layers 13 are formed, using the gate electrode 16 and the oxide film 24 as masks. An oxide film is shaped into a diffusion window by the gate electrode 16, and an n<+> type layer 25 as well as n<+> type sources 14 are formed, employing the oxide film and the gate electrode 16 as masks. The surface of the gate electrode 16 is coated with an oxide film 17, a hole is bored to a contact section in the gate electrode 16, and a source electrode 18 and a metallic gate electrode 19 are shaped. An a-Si film is deposited on the whole surface of an element, and a resistive field plate film 27 is formed. A drain electrode 20 is shaped onto the surface of a wafer. Accordingly, the element having high reliability can be acquired through a simple process.</p> |
