| 摘要 |
PURPOSE:To reduce charge storage by forming an n<+> buried layer between an n<-> Si layer just under an electrode for a resistance element connected to an external terminal and a p-Si substrate. CONSTITUTION:An n<-> Si layer is shaped onto a p-type Si substrate 1 through epitaxial growth, and an island region 2, the periphery of which is surrounded by an isolation diffusion p<+> layer 3, is used as an epitaxial resistance region in the n<-> Si layer. The isolation p<+> layer 3 is connected at ground potential. 4a and 4b represent emitter resistance n<+> layers for leading out electrodes in the resistor. An n<+> buried layer 5 is shaped between the epitaxial n<-> layer 2 just under one n<+> layer 4a connected to an external terminal in 4a and 4b and the p<-> substrate. Accordingly, there is a low breakdown-strength diode (n<+>p<-> junction) D2, thus resulting in the easy flowing of discharge currents by a surge and reducing the charge storage of the surface, then improving an electrostatic breakdown level. |
