| 摘要 |
PURPOSE:To enable the exposure of even a superfine pattern by dividing and placing a circuit pattern within one reticle, and moving both the reticle and the wafer stage to divisionally expose the circuit patterns respectively to the predetermined positions on the wafer, thereby enabling a chip to be made large without being restricted by the maximum exposure region for one shot. CONSTITUTION:First a reticle 2 is set on a reticle stage 1. In this case, since the chip size is so large that the transfer cannot be accomplished by one exposure shot, on this reticle 2, a chip pattern is divided into four patterns A, B, C, D and they are respectively located in the predetermined positions. Accordingly, after aligning the reticle 2, if the moving precision of the reticle stage is good, by freely moving the reticle stage 1 in the X-and Y-directions, a pattern desired to be exposed can be brought to the incident region of light and can be exposed. That is, the pattern D is able to expose a pattern d onto the surface of a wafer 5 which is set on a wafer stage 4. |
