| 摘要 |
PURPOSE:To form a larger opening pattern and a finer opening pattern more efficiently compared with the case of using a single resist film by conducting pattern-exposure of a resist film to a predetermined light beam and treating it with a first developing solution, and thereafter conducting pattern-exposure of the same resist film to an electron bean and treating it with a second developing solution. CONSTITUTION:A first patter 3' having a width of 1mum or larger is exposed using for ultraviolet light. Thereafter, a room-temperature developing treatment of about 210 seconds is performed with methyl isobutyl ketone, forming an opening having a desired first pattern 3. Then, against polymethyl methacrylate (PMMA) 2, a second pattern 4 having a width of 0.1mum is exposed by an electron beam exposure system. And, this PMMA 2 is subjected to a developing treatment at a room temperature for about 120 seconds using isopropyl alcohol, forming an opening of the second pattern 4 having a width of 0.1mum. With this, a large opening pattern and a fine opening pattern can efficiently be formed compared with the case of a single resist film. |
