| 摘要 |
PURPOSE:To be able to manufacture a semiconductor laser by once crystal growth, to flatten the surface, to improve the bondability, and to efficiently escape the heat generated upon laser operation by forming a ridge also at a substrate except the region of the ridge for actually laser-operating to form a multilayer thin film having a double hetero structure including an active layer. CONSTITUTION:A photomask 10 is so formed as to form a stripe on an n-type GaAs substrate 2, and a ridge is formed by chemical etching. Then, an n-type GaAs buffer layer 3, an n-type AlyGa1-yAs clad layer 4, a nondoped AlxGa1-xAs active layer 5, a p-type AlyGa1-yAs clad layer 6, an n-type AlzGa1-zAs buried layer 7, and an n-type GaAs cap layer 8 are sequentially grown. Then, Zn is diffused at 11 to the layer 6 at the top of the ridge at the center, and n-type and p-type electrodes 1, 9 are formed. When a current is injected, the current is narrowed by the upper and lower parts by the ridge on the substrate 2 and the p-type region formed by diffusing Zn 11, thereby obtaining a semiconductor laser which oscillates in a single lateral mode. |
