| 摘要 |
PURPOSE:To control the reflectivity if a reflecting film easily by forming a groove having gentle curvature into a semi-insulating semiconductor substrate and shaping the end face of a resonator in approximately parallel with the surface of the substrate by flatly burying laser layer structure. CONSTITUTION:A striped groove 1A with an edge section having easy curvature is formed into an SI-GaAs substrate 1, and a p-GaAs layer 2, a p-AlGaAs layer 3, an MQW layer 4 consisting of GaAs/AlGaAs, an n-AlGaAs layer 5 and an n-GaAs layer 6 are grown onto the substrate in succession, coating the groove 1A, thus shaping laser layer structure. The end face of laser layer structure is exposed to the surface of the substrate through flattening etching until the surface of the SI-GaAs substrate 1 is exposed, and Zn is diffused in a striped manner at a distance in resonator width W and so as to reach the p-AlGaAs layer 3 from the surface of the substrate to form p-type regions 7, 8. The end faces of a resonator are coated with reflecting films 9 composed of an Si/SiO2 multilayer film, the surface of the laser layer structure is coated with an SiN layer 10, an opening is bored to the upper section of the p-type region 7 and an Au/Zn/Au layer 11 is shaped as a p side electrode, and an opening is bored to the upper section of the n-GaAs layer 6 and an Au/AuGe layer 12 is formed as an n side electrode. Accordingly, the etching of the end faces, the application of the reflecting films and the control of film thickness are facilitateed, thus easily controlling the reflectivity of the reflecting films. |
