| 摘要 |
PURPOSE:To reduce the excess margin for registration and attempt the high density integration of LSI, by forming, on the sidewall part of the wiring, an insulating film whose etch rate is different from the under part of a wiring, forming an interlayer film whose etch rate is different from the insulating film, forming a through hole while the insulating film is left, and forming an upper part of the wiring. CONSTITUTION:After a first aluminum wiring 2 is formed on an insulative substrate 1 composed of CVDSiO2, a plasma nitride film (insulating film) 3 is formed, By anisotropic dry etching, the insulating film 3 only is eliminated as restrictedly as possible. As the result, the insulating film 3 is left on the sidewall of the first aluminum wiring 2. Next, an interlayer film 4 of phosphoric acid glass is grown, and patterning is performed to make a through hole. The interlayer film 4 is subjected to a wet etching, and photo resist 5 is eliminated. As the insulating film 3 is left on the sidewall part of the first aluminum wiring 2, the insulative substrate 1 under the first aluminum wiring 2 does not suffer from the etching, and no disconnection generate when the second aluminum wiring 6 is formed. |
