| 摘要 |
forming a gate electrode(2) by depositing and patterning a Cr metal film on a glass substrate(1); depositing a first SiNx gate insulator(3a), and removing the first gate insulator on the gate electrode by etching process using a negative PR, and depositing and planarizing a second gate insulator(3b); depositing an a-Si layer(4) and an etch stopper layer(5) continuously, and patterning and etching; and depositing a thin n+a-Si layer(6), and forming an Al source electrode(7) and an Al drain electrode(8), and etching the thin n+a-Si layer(6).
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