CHANNEL FORMATION METHOD OF DOUBLE IMPLANT PROCESS
摘要
performing a process of double implant of 49BF2 source ;performing a process by using an ion implant of 11B source; performing the first process by using an energy of 45keV and dose of 2.0=G1011cm-2, the second process by using an energy of 35keV and dose of 1.15=G1012cm-2.
申请公布号
KR960012577(B1)
申请公布日期
1996.09.23
申请号
KR19920010739
申请日期
1992.06.20
申请人
HYUNDAI ELECTRONICS IND. CO., LTD.
发明人
LEE, WOO - BONG;HONG, SANG - KI;SONN, KI - KEUN;JANG, YOUNG - AM;KO, JAE - WAN;HYUN, ILL - SUN
