| 摘要 |
PURPOSE:To realize a high-speed device by a method wherein a stripe-like mesa part is formed by etching a high-resistance active layer on a substrate, a wall-like supply layer is formed at the side of the mesa by anisotropically etching a carrier supply layer on the mesa, and a heterojunction between the supply layer and the active layer is exposed so that electrodes at both edges of the supply layer and a control electrode in the form of a quasi-unidimensional carrier gas layer generated at the wall-like active layer can be formed. CONSTITUTION:After an i-type GaAs active layer 2 has been grown on a semi- insulating GaAs substrate 1, a stripe-like photoresist film 3 is formed and the active layer 2 is etched by making use of this film 3 as a mask so that a mesa part 2A can be formed. Then, the film 3 is removed, and, after an n-type AlxGa1-xAa electron supply layer 4 has been formed, this layer is etched so that a wall-like part remains unetched at both sides of the mesa part 2A. Then, by etching the active layer 2 and the mesa part 2A, a junction plane of the wall-like electron supply layer 4 and the active layer 2 functions as a heterointerface, and a quasi-unidimensional electron gas layer 5 is generated at the sides of the wall-like active layer 2. At the last stage a source electrode 6, a drain electrode 7 and a gate electrode 8 are formed. |
