| 摘要 |
PURPOSE:To realize a high-speed device by a method wherein, after a stripe-like semiconductor layer has been formed on a carrier supply layer, a high-resistance semiconductor layer forming a heterojunction on the layer is etched anisotropically, and a wall-like active layer is formed at the side of the layer so that an electrode to control a quasi-unidimensional carrier gas layer generated at the active layer between electrodes at both ends of the active layer can be formed. CONSTITUTION:An n-type AlGaAs electron supply layer 2 and an i-type AlGaAs side-wall support layer 3 are formed on a semi-insulating GaAs substrate 1. Then, a stripe-like photoresist film 4 is formed, and, by etching the support layer 3 by making use of this film 4 as a mask, the support layer 3 is transformed into a stripe-like layer. Then, the resist film 4 is removed and an i-type GaAs active layer 5 is formed. Then, the active layer 5 is etched by anisotropic dry etching so that only wall-like sides of the support layer 3 remain unetched. The junction plane of this wall-like active layer 5 and the supply layer 2 functions as a heterointerface, and a quasi-unidimensional electron gas layer 5A is formed at the side of the active layer 5. At the last stage, a source electrode 6, a drain electrode 7 and a gate electrode 8 are formed. |
