| 摘要 |
<p>PURPOSE:To carry out an etching treatment without causing amorphous silicon to be subject to a passivation process and obtain a desired island amorphous silicon pattern by using an etching liquid comprising hydrogen fluoride and nitric acid at least, in which the total concentration of them reaches around 50% or more. CONSTITUTION:When an island amorphous silicon semiconductor layer 3 is fomed, an etching liquid comprising, for instance, hydrogen fluoride, nitric acid, and water (solute concentration ratio of them is 1:120:80; the concentration of medicine shall be converted into 100%) is used for an etching treatment. An etching rate is about 1200-1300 A/min. and the island amorphous silicon semiconductor layer can be formed just as a resist pattern without forming a passivation layer and also even a formation of an opening is not hindered by the passivation layer. Furthermore, the total concentration of hydrogen fluoride, nitric acid in the etching liquid is almost 50% or more (in other words, the concentration of water or acetic acid that are dilution liquids is about 50% or less) and no passivation of the amorphous silicon layer is developed.</p> |
