| 摘要 |
Semiconductor laser comprising an active layer (3, 3') framed by two confinement layers (1 and 2), n-doped and p-doped respectively to produce a quantum well and furthermore including a monoatomic rare earth layer (5) whose excited level is in resonance with one of the electron levels of the quantum well. The invention is applicable in particular to lasers emitting at a wavelength of 1.54 microns. <IMAGE> |
