| 摘要 |
PROBLEM TO BE SOLVED: To form a precise fine pattern finer than the resolution of a stepper on a substrate by laminating two intemediate films having different etching selection ratios on a photosensitive film, forming a second intermediate-film pattern and a first intermediate-film pattern on the intermediate films by a specific method and utilizing these patterns. SOLUTION: First and second intermediate films 14, 16 having different etching selection ratios are laminated on a first photosensitive film 12 on a layer to be etched 10, a second photosensitive film 20 formed on the intermediate films 14, 16 is exposed through a first exposure mask 22 having an optical cut-off film pattern 26 on a transparent substrate 24, and developed to shape second photosensitive-film patterns 20A, and second intermediate-film patterns 16A are formed. A third photosensitive-film pattern 28A is formed between anti-reflection film patters 18A, a first intermediate-film pattern 14A is shaped by utilizing these patterns, the first and second intermediate-film patterns 14A, 16A are removed selectively, the layer to be etched 10 is etched while using a first photosensitive-film patter 12A as a mask, and a fine pattern is formed. |
