RF PLASMA REACTOR HAVING ELECTRODE FOR CLEANING DURING TREATING OF SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide a means for cleaning the inner surface of a chamber during treatment of a wafer. SOLUTION: A plasma reactor for treating a semiconductor wafer is implemented and has a chamber 10 contg. a treating gas and conductor 45 connected to an RF power source 50 to generate a plasma in the control 10 having a face 25 to be contaminated with particles in the plasma. To remove a deposited contaminant from the face 25, during treatment of the wafer, the face 25 is impacted with the particles from the plasma. This impact is generated by coupling an RF power from the RF power source with the face 25 during treating of the wafer and this coupling is made by a capacitive cleaning electrode 80 adjacent to the face 25 and connected to the RF power source.